A novel technique to accurately characterize interconnects with general, piecewise homogeneous material parameters and arbitrary polygonal cross-sections is presented. To compute the per-unit-of-length complex inductance and capacitance matrices of the considered structures, we apply a boundary integral equation framework, invoking a Dirichlet-to-Neumann formalism to recast the problem at hand. The pertinent operators are constructed by means of the numerically fast Fokas method, leveraging fully analytical expressions for the pertinent matrix elements. Numerical examples of various multiconductor transmission lines demonstrate that our proposed scheme is flexible and precise. Since our method is not limited to rectangular cross-sections, manufacturing effects such as etching can also be taken into account. Moreover, the examples are not restricted to RLGC-data as we also consider signal attenuation, slow-wave factors and cross-talk.
A semi‑classical Floquet‑NEGF approach to model photon‑assisted tunneling in quantum well devices
The non-equilibrium Green’s function formalism is often employed to model photon-assisted tunneling processes in opto-electronic quantum well devices. For this purpose, self-consistent schemes based on