Our
Publications
As any academic research lab, we publish our work in high-impact journals and as conference contributions. This way, we aim to disseminate research and findings to a broad audience, trigger interaction and collaboration, and advance science and technology.
A complete overview of all our publications can be found via the database of Ghent University embedded here. Our most recent work is presented in the posts below.
Recent publications
Full-Wave Broadband Characterization of On-Chip Passives Subject to Etching Effects Using a Vectorial Unified Transform for Polyhedral Geometries
This paper presents a generalized formulation of the differential surface admittance (DSA) operator for three-dimensional electromagnetic analysis of arbitrary polyhedral geometries. Motivated by the increasing need for accurate signal integrity modeling in high-frequency integrated circuits and printed circuit boards, the
An FDTD-TDDFT method for the EM/QM co-simulation of nanowire systems in the Lorenz gauge
Real-time time-dependent density functional theory (TDDFT) constitutes a cornerstone in the modeling of nanoscale materials. Although numerous application areas have already benefited from the technique, investigation of both forward and backward coupling in matter systems subject to a vectorial electromagnetic
Analytic Solution and Spectral Analysis of the Differential Surface Admittance Electric Field Integral Equation for Spherical Geometries
In order to enable a rigorous spectral analysis of the existing single-source differential surface admittance electric field integral equation (DSA-EFIE), a fully analytical solution for scattering at a nonmagnetic homogeneous dielectric sphere is presented. To this end, the pertinent surface
A Novel Vectorial Unified Transform for the Full-Wave Broadband Characterization of On-chip Passives
We present a novel framework for deriving the three-dimensional (3-D) differential surface admittance (DSA) operator. The approach is based on a new unified transform method for the 3-D vector Helmholtz equation. This formulation enables a broader applicability than existing DSA
Bridging the AC Non-Equilibrium Green’s Function Formalism and Transmission Line Models for the Analysis of Nanointerconnects
The unfavorable scaling of Cu interconnects at nanoscale dimensions has prompted the search for alternative materials. To model electron transport in these novel nanointerconnects, both steady-state non-equilibrium Green’s function (NEGF) techniques and transmission line (TL) models have been employed. While
Conservative fourth-order accurate finite-difference scheme to solve the (3+1)D tilted Dirac equation in strained Dirac semimetals
Owing to their increased electron mobility compared to conventional semiconductors, three-dimensional (3D) Dirac semimetals are considered to be promising candidates for integration into next-generation electronic devices. In these materials, the low-energy dynamics of the charge carriers are governed by an