Electrostatically induced interconnect structures in graphene are an alluring alternative for nanoribbons to be used in future integrated circuits (ICs) because of the avoidance of edge scattering. In this contribution, these structures are analyzed using a novel first-principles modeling approach, based on higher-order conservative partitioned Runge-Kutta time stepping for the (2+1)D Dirac equation. The validity and applicability of the modeling tool are demonstrated by applying it to a bent interconnect and to a coupler.
A Novel Vectorial Unified Transform for the Full-Wave Broadband Characterization of On-chip Passives
We present a novel framework for deriving the three-dimensional (3-D) differential surface admittance (DSA) operator. The approach is based on a new unified transform method