Electrostatically induced interconnect structures in graphene are an alluring alternative for nanoribbons to be used in future integrated circuits (ICs) because of the avoidance of edge scattering. In this contribution, these structures are analyzed using a novel first-principles modeling approach, based on higher-order conservative partitioned Runge-Kutta time stepping for the (2+1)D Dirac equation. The validity and applicability of the modeling tool are demonstrated by applying it to a bent interconnect and to a coupler.
Full-Wave Broadband Characterization of On-Chip Passives Subject to Etching Effects Using a Vectorial Unified Transform for Polyhedral Geometries
This paper presents a generalized formulation of the differential surface admittance (DSA) operator for three-dimensional electromagnetic analysis of arbitrary polyhedral geometries. Motivated by the increasing