Accurate modeling of on-chip passive components is vital for reliable integrated circuit (IC) design. However, this is non-trivial due to the inherent heterogeneity of the structures and the wide range of material parameters involved. In this work, we present a single-source boundary integral equation (BIE) for modeling on-chip interconnects and passive elements. To reduce the number of discretization elements—and thus the number of unknowns—we construct a 3-D differential surface admittance (DSA) operator for piecewise homogeneous cuboidal and rectilinear polyhedral objects. Specifically, a novel method is proposed to handle material interfaces efficiently. By combining this new formulation of the DSA operator with the augmented electric field integral equation (EFIE), we obtain a framework that enables accurate modeling and fast broadband impedance extraction of on-chip structures. The proposed approach is validated through several numerical experiments, including important applications such as metal-insulator-metal (MIM) capacitors, and demonstrates excellent agreement with reference solutions while significantly reducing computational cost compared to state-of-the-art solvers.
Bridging the AC Non-Equilibrium Green’s Function Formalism and Transmission Line Models for the Analysis of Nanointerconnects
The unfavorable scaling of Cu interconnects at nanoscale dimensions has prompted the search for alternative materials. To model electron transport in these novel nanointerconnects, both