In this contribution, an enhanced 3-D differential surface admittance operator is proposed, facilitating accurate modeling of piecewise homogeneous cuboidal objects. By exploiting the analytical properties of entire-domain basis functions, material interfaces are effectively eliminated from the formulation, leading to a reduction in the number of unknowns without compromising the accuracy of the operator. After a validation of the novel approach, its effectiveness is demonstrated through the analysis of the impedance responses of on-chip interdigital capacitor structures.
Conservative fourth-order accurate finite-difference scheme to solve the (3+1)D tilted Dirac equation in strained Dirac semimetals
Owing to their increased electron mobility compared to conventional semiconductors, three-dimensional (3D) Dirac semimetals are considered to be promising candidates for integration into next-generation electronic