In this contribution, we present a new approach to fully characterize interconnects composed out of arbitrary polygonal cross-sections and containing piecewise homogeneous material parameters. The complex per-unit-of-length inductance and capacitance matrices are obtained through the application of pertinent Dirichlet-to-Neumann operators, which are computed by means of an extended Fokas method, that are integrated in a boundary integral equation approach. As the complete RLGC-data of the structures under study is computed, we are able to assess relevant properties such as signal attenuation and cross-talk while the support for polygonal shapes allows for the inclusion of manufacturing effects such as etching.
Conservative fourth-order accurate finite-difference scheme to solve the (3+1)D tilted Dirac equation in strained Dirac semimetals
Owing to their increased electron mobility compared to conventional semiconductors, three-dimensional (3D) Dirac semimetals are considered to be promising candidates for integration into next-generation electronic