In this contribution, we propose a novel approach to rigorously model interconnect structures with an arbitrary convex polygonal cross-section and general, piecewise homogeneous, material parameters. A full-wave boundary integral equation formulation is combined with a differential surface admittance approach, invoking an extended form of the numerically fast Fokas method to construct the pertinent operator. Several examples validate our method and demonstrate its applicability to per-unit-of-length resistance and inductance characterization.
Conservative fourth-order accurate finite-difference scheme to solve the (3+1)D tilted Dirac equation in strained Dirac semimetals
Owing to their increased electron mobility compared to conventional semiconductors, three-dimensional (3D) Dirac semimetals are considered to be promising candidates for integration into next-generation electronic