Electrostatically induced interconnect structures in graphene are an alluring alternative for nanoribbons to be used in future integrated circuits (ICs) because of the avoidance of edge scattering. In this contribution, these structures are analyzed using a novel first-principles modeling approach, based on higher-order conservative partitioned Runge-Kutta time stepping for the (2+1)D Dirac equation. The validity and applicability of the modeling tool are demonstrated by applying it to a bent interconnect and to a coupler.
Broadband Electromagnetic Modeling of On-Chip Passives Using a Differential Surface Admittance Operator for 3-D Piecewise Homogeneous Structures
Accurate modeling of on-chip passive components is vital for reliable integrated circuit (IC) design. However, this is non-trivial due to the inherent heterogeneity of the