Electrostatically induced interconnect structures in graphene are an alluring alternative for nanoribbons to be used in future integrated circuits (ICs) because of the avoidance of edge scattering. In this contribution, these structures are analyzed using a novel first-principles modeling approach, based on higher-order conservative partitioned Runge-Kutta time stepping for the (2+1)D Dirac equation. The validity and applicability of the modeling tool are demonstrated by applying it to a bent interconnect and to a coupler.
Conservative fourth-order accurate finite-difference scheme to solve the (3+1)D tilted Dirac equation in strained Dirac semimetals
Owing to their increased electron mobility compared to conventional semiconductors, three-dimensional (3D) Dirac semimetals are considered to be promising candidates for integration into next-generation electronic