Electrostatically induced interconnect structures in graphene are an alluring alternative for nanoribbons to be used in future integrated circuits (ICs) because of the avoidance of edge scattering. In this contribution, these structures are analyzed using a novel first-principles modeling approach, based on higher-order conservative partitioned Runge-Kutta time stepping for the (2+1)D Dirac equation. The validity and applicability of the modeling tool are demonstrated by applying it to a bent interconnect and to a coupler.
Broadband Impedance Response Extraction of On-Chip Interdigital Capacitors using a 3-D DSA Operator for Piecewise Homogeneous Structures
In this contribution, an enhanced 3-D differential surface admittance operator is proposed, facilitating accurate modeling of piecewise homogeneous cuboidal objects. By exploiting the analytical properties